LMH6505 Datasheet, PDF (2/20 Pages) National Semiconductor (TI) – Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 4)
Human Body Model
Machine Model
Input Current
Output Current
Supply Voltages (V⁺ - V^−)
Voltage at Input/ Output pins
Storage Temperature Range
2000V
200V
±10 mA
120 mA (Note 3)
12.6V
V⁺ +0.8V, V^− −0.8V
−65˚C to 150˚C
Junction Temperature
Soldering Information:
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
150˚C
235˚C
260˚C
Operating Ratings (Note 1)
Supply Voltages (V⁺ - V^−)
Operating Temperature Range
Thermal Resistance:
8 -Pin SOIC
(θ_JC)
60
8-Pin MSOP
65
7V to 12V
−40˚C to +85˚C
(θ_JA)
165
235
Electrical Characteristics(Note 2)
Unless otherwise specified, all limits are guaranteed for T_J = 25˚C, V_S = ±5V, A_VMAX = 9.4 V/V, R_F = 1 kΩ, R_G = 100Ω, V_IN =
±0.1V, R_L = 100Ω, V_G = +2V. Boldface limits apply at the temperature extremes.
Min
Typ
Max
Symbol
Parameter
Conditions
(Note 6) (Note 6) (Note 6) Units
Frequency Domain Response
BW
−3 dB Bandwidth
V_OUT < 1 V_PP
150
V_OUT < 4 V_PP, A_VMAX = 100
38
GF
Gain Flatness
V_OUT < 1 V_PP
40
0.9V ≤ V_G ≤ 2V, ±0.2 dB
Att Range Flat Band (Relative to Max Gain) ±0.2 dB Flatness, f < 30 MHz
26
Attenuation Range (Note 13)
±0.1 dB Flatness, f < 30 MHz
9.5
MHz
MHz
dB
BW
Control
Gain control Bandwidth
V_G = 1V (Note 12)
100
MHz
CT (dB) Feed-through
GR
Gain Adjustment Range
V_G = 0V, 30 MHz
(Output/Input)
f < 10 MHz
f < 30 MHz
−51
dB
80
dB
71
Time Domain Response
t_r, t_f
OS %
Rise and Fall Time
Overshoot
0.5V Step
2.1
ns
10
%
SR
Slew Rate (Note 5)
Non Inverting
Inverting
900
1500
V/µs
Distortion & Noise Performance
HD2
HD3
2^nd Harmonic Distortion
3^rd Harmonic Distortion
2V_PP, 20 MHz
−47
–61
dBc
THD
En tot
I_N
DG
DP
Total Harmonic Distortion
Total Equivalent Input Noise
Input Noise Current
Differential Gain
Differential Phase
f > 1 MHz, R_SOURCE = 50Ω
f > 1 MHz
f = 4.43 MHz, R_L = 100Ω
−45
4.4
nV/
2.6
pA/
0.30
%
0.15
deg
DC & Miscellaneous Performance
GACCU
G Match
K
Gain Accuracy
(See Application Information)
Gain Matching
(See Application Information)
Gain Multiplier
(See Application Information)
V_G = 2.0V
0.8V < V_G < 2V
V_G = 2.0V
0.8V < V_G < 2V
0
±0.50
dB
+0.1/−0.53 +4.3/−3.9
—
±0.50
dB
—
+4.2/−4.0
0.890
0.940
0.990
V/V
0.830
1.04
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