DS92LV010AEP Datasheet, PDF (3/12 Pages) National Semiconductor (TI) – Bus LVDS 3.3/5.0V Single Transceiver

Absolute Maximum Ratings (Notes 4, 5)
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Supply Voltage (V_CC)
Enable Input Voltage (DE,
RE)
6.0V
−0.3V to (V_CC + 0.3V)
Driver Input Voltage (DIN)
Receiver Output Voltage
(R_OUT)
Bus Pin Voltage (DO/RI±)
−0.3V to (V_CC + 0.3V)
−0.3V to (V_CC + 0.3V)
−0.3V to + 3.9V
Driver Short Circuit Current
Continuous
ESD (HBM 1.5 kΩ, 100 pF)
>2.0 kV
Maximum Package Power Dissipation at 25°C
SOIC
1025 mW
Derate SOIC Package
Storage Temperature
Range
Lead Temperature
(Soldering, 4 sec.)
8.2 mW/°C
−65°C to +150°C
260°C
Recommended Operating
Conditions
Min
Max
Supply Voltage (V_CC), or
Supply Voltage (V_CC)
Receiver Input Voltage
3.0
3.6
4.5
5.5
0.0
2.9
Operating Free Air Temperature
−40
+85
Units
V
V
V
°C
DC Electrical Characteristics (Notes 5, 6, 12)
T_A = −40°C to +85°C unless otherwise noted, V_CC = 3.3V ± 0.3V
Symbol
Parameter
Conditions
V_OD
ΔV_OD
V_OS
ΔV_OS
I_OSD
V_OH
Output Differential Voltage
V_OD Magnitude Change
Offset Voltage
Offset Magnitude Change
Output Short Circuit Current
Voltage Output High
R_L = 27Ω, Figure 1
V_O = 0V, DE = V_CC
V_ID = +100 mV
Inputs Open
I _OH = −400 µA
Inputs Shorted
V_OL
I_OS
V_TH
V_TL
I_IN
V_IH
V_IL
I_IH
I_IL
V_CL
I_CCD
I_CCR
I_CCZ
I_CC
C_output
Voltage Output Low
Output Short Circuit Current
Input Threshold High
Input Threshold Low
Input Current
Minimum Input High Voltage
Maximum Input Low Voltage
Input High Current
Input Low Current
Input Diode Clamp Voltage
Power Supply Current
Capacitance @ BUS Pins
Inputs Terminated, R_L = 27Ω
I_OL = 2.0 mA, V_ID = −100 mV
V_OUT = 0V, V_ID = +100 mV
DE = 0V
DE = 0V, V_IN = +2.4V, or 0V
V_CC = 0V, V_IN = +2.4V, or 0V
V_IN = V_CC or 2.4V
V_IN = GND or 0.4V
I_CLAMP = −18 mA
DE = RE = V_CC , R_L = 27Ω
DE = RE = 0V
DE = 0V, RE = V_CC
DE = V_CC, RE = 0V, R_L = 27Ω
Pin Min Typ Max Units
DO+/RI+, 140 250 360 mV
DO−/RI−
3 30 mV
1 1.25 1.65 V
5 50 mV
−12 −20 mA
R _OUT
2.8 3
V
2.8 3
V
2.8 3
V
2.8 3
V
0.1 0.4 V
−5 −35 −85 mA
DO+/RI+,
DO−/RI− _−100
+100 mV
mV
−20 ±1 +20 µA
−20 ±1 +20 µA
DIN, DE, 2.0
RE
GND
V_CC V
0.8 V
±1 ±10 µA
±1 ±10 µA
−1.5 −0.8
V
V _CC
13 20 mA
5
8 mA
3 7.5 mA
16 22 mA
DO+/RI+,
5
pF
DO−/RI−
3
201193 Version 3 Revision 1 Print Date/Time: 2009/06/15 11:42:19
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