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THS4511-SP Datasheet, PDF (2/25 Pages) Texas Instruments – RAD-TOLERANT CLASS V, WIDEBAND, FULLY DIFFERENTIAL AMPLIFIER
THS4511–SP
SLOS538A – SEPTEMBER 2007 – REVISED OCTOBER 2007
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGING/ORDERING INFORMATION(1)
TEMPERATURE
–55°C to 125°C
PACKAGED DEVICES
CERAMIC FLATPACK
W (16)(2)
SYMBOL
5962-0722201VFA
5962-0722201VFA
(1) For the most current package and ordering information, see the Package Option Addendum at the end
of this document, or see the TI website at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
VS– to VS+
VI
VID
IO
TJ
TA
Tstg
Supply voltage
Input voltage
Differential input voltage
Output current
Continuous power dissipation
Maximum junction temperature(2)
Operating free-air temperature range
Storage temperature range
HBM
ESD ratings
CDM
MM
UNIT
6V
±VS
4V
200 mA
See Dissipation Rating Table
150°C
–55°C to 125°C
–65°C to 150°C
2000 V
1500 V
100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
DISSIPATION RATINGS TABLE
PACKAGE
W (16)
θJC
14.7°C/W
θJA
189°C/W
POWER RATING
TA ≤ 25°C
TA = 125°C
661 mW
132 mW
2
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