THS4211 Datasheet, PDF (2/50 Pages) Texas Instruments – LOW-DISTORTION HIGH-SPEED VOLTAGE FEEDBACK AMPLIFIER

THS4211
THS4215
SLOS400E – SEPTEMBER 2002 – REVISED SEPTEMBER 2009 ................................................................................................................................... www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range (unless otherwise noted).⁽¹⁾
Supply voltage, V_S
Input voltage, V_I
Output current, I_O
Continuous power dissipation
Maximum junction temperature, T_J ⁽²⁾
Maximum junction temperature, continuous operation, long-term reliability T_J ⁽³⁾
Storage temperature range, T_stg
HBM
ESD ratings CDM
MM
UNIT
16.5 V
±V_S
250 mA
See Dissipation Ratings Table
+150°C
+125°C
–65°C to +150°C
4000 V
1500 V
200 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(3) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
PACKAGE DISSIPATION RATINGS⁽¹⁾
PACKAGE
θ_JC
(°C/W)
D (8-pin)
DGN (8-pin)⁽¹⁾
DGK (8-pin)
DRB (8-pin)
38.3
4.7
54.2
5
θ_JA ⁽²⁾
(°C/W)
97.5
58.4
260
45.8
POWER RATING ⁽³⁾
T_A≤ +25°C
1.02 W
T_A= +85°C
410 mW
1.71 W
685 mW
385 mW
154 mW
2.18 W
873 mW
(1) The THS4211/5 may incorporate a PowerPAD™ on the underside of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the
PowerPAD thermally enhanced package.
(2) This data was taken using the JEDEC standard High-K test PCB.
(3) Power rating is determined with a junction temperature of +125°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below +125°C for best performance and long
term reliability.
RECOMMENDED OPERATING CONDITIONS
Supply voltage, (V_S+ and V_S–)
Input common-mode voltage range
Dual supply
Single supply
MIN
±2.5
5
V_S– + 1.2
MAX
±7.5
15
V_S+ – 1.2
UNIT
V
V
2
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