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LMH6502 Datasheet, PDF (2/19 Pages) National Semiconductor (TI) – Wideband, Low Power, Linear-in-dB Variable Gain Amplifier
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 4):
Human Body
Machine Model
Input Current
VIN Differential
Output Current
Supply Voltages (V+ - V−)
Voltage at Input/ Output pins
Storage Temperature Range
2KV
200V
±10mA
±(V+ -V−)
120mA (Note 3)
12.6V
V+ +0.8V,V− - 0.8V
−65˚C to +150˚C
Junction Temperature
Soldering Information:
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
+150˚C
235˚C
260˚C
Operating Ratings (Note 1)
Supply Voltages (V+ - V−)
Temperature Range
Thermal Resistance:
14-Pin SOIC
14-Pin TSSOP
(θJC)
45˚C/W
51˚C/W
5V to 12V
−40˚C to +85˚C
(θJA)
138˚C/W
160˚C/W
Electrical Characteristics(Note 2)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VS = ±5V, AV(MAX) = 10, VCM = 0V, RF = 1kΩ, RG = 174Ω,
VIN_DIFF = ±0.1V, RL = 100Ω, VG = +2V. Boldface limits apply at the temperature extremes.
Min
Typ
Max
Symbol
Parameter
Conditions
(Note 6) (Note 6) (Note 6) Units
Frequency Domain Response
BW
-3dB Bandwidth
VOUT < 0.5PP
130
VOUT < 0.5PP, AV(MAX) = 100
50
GF
Gain Flatness
VOUT < 0.5VPP
30
0.6V ≤ VG ≤ 2V, ±0.3dB
Att Range Flat Band (Relative to Max Gain) ±0.2dB, f < 30MHz
16
Attenuation Range (Note 14)
±0.1dB, f < 30MHz
7.5
MHz
MHz
dB
BW
Control
Gain control Bandwidth
VG = 1V (Note 13)
100
MHz
PL
Linear Phase Deviation
DC to 60MHz
1.5
deg
G Delay Group Delay
DC to 130MHz
2.5
ns
CT (dB) Feed-through
VG = 0V, 30MHz (Output
Referred)
−47
dB
GR
Gain Adjustment Range
f < 10MHz
f < 30MHz
72
dB
67
Time Domain Response
tr, tf
OS %
Rise and Fall Time
Overshoot
0.5V Step
0.5V Step
2.2
ns
10
%
SR
Slew Rate
4V Step
1800
V/µs
∆ G Rate Gain Change Rate
VIN = 0.3V, 10%-90% of Final
4.8
Output
dB/ns
Distortion & Noise Performance
HD2
HD3
THD
En tot
2nd Harmonic Distortion
3rd Harmonic Distortion
Total Harmonic Distortion
Total Equivalent Input Noise
2VPP, 20MHz
2VPP, 20MHz
2VPP, 20MHz
1MHz to 150MHz
−55
dBc
−57
dBc
−53
dBc
7.7
nV/
IN
Input Noise Current
DG
Differential Gain
1MHz to 150MHz
f = 4.43MHz, RL = 150Ω,
Neg. Sync
2.4
pA/
0.34
%
DP
Differential Phase
f = 4.43MHz, RL = 150Ω,
Neg. Sync
0.10
deg
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