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| 20N50 Datasheet, PDF (6/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET | |||
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SEMICONDUCTOR
Fig.7 Breakdown voltage variation vs.
Temperature
1.2
1.1
1.0
0.9
Note:
1. VGS = 0V
2. lD = 250μA
0.8
-100 -50
0
50 100 150 200
Junction temperature, Tj (°C)
20N50 Series RRooHHSS
Nell High Power Products
Fig.8 On-Resistance variation vs.
Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50
0
Note:
1. VGS = 10V
2. lD = 10A
50 100 150 200
Junction temperature, TJ (°C)
Fig.9 Maximum safe operating area
102
101
Operation in This Area is
Limited by RDS (on)
DC
10μs
100μs
1ms
10ms
100
Note:
1. TC = 25°C
2. TJ = 150°C
3. Sing Pulse
10-1
100
101
100ms
102
103
Drain-Source voltage, VDS (V)
Fig.10 Maximum drain current vs.
Case temperature
25
20
15
10
5
0
25
50
75
100
125
150
Case temperature, TJ (°C)
Fig.11 Transient thermal response curve
100
D = 0.5
10-1
10-2
0.2
0.1
0.05
0.02
0.01
Single pulse
10-5
10-4
10-3
10-2
PDM
t1
t2
Notes:
1. Rth(j-c) (t) = 0.44°C/W Max.
2. Duty factor, D = t1/ t 2
3. TJM - TC = PDM * Rth(j-c) (t)
10-1
100
101
Square wave pulse duration, t1 (sec)
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