20N50 Datasheet, PDF (2/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
THERMAL RESISTANCE
SYMBOL
PARAMETER
R_th(j-c)
Thermal resistance, junction to case
R_th(c-s)
R_th(j-a)
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
20N50 Series RRooHHSS
Nell High Power Products
TO-3P(B)
TO-3P(B)
Min. Typ. Max.
0.44
0.5
40
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V_(BR)DSS
Drain to source breakdown voltage
I_D = 250µA, V_GS = 0V
500
▲ ▲ ^V(BR)DSS^{/ T}J ^{Breakdown voltage temperature coefficient I}D ^{= 250µA, referenced to 25°C}
I_DSS
Drain to source leakage current
V_DS=500V, V_GS=0V T_C = 25°C
V_DS=400V, V_GS=0V T_C=150°C
I_GSS
Gate to source forward leakage current
Gate to source reverse leakage current
V_GS = 30V, V_DS = 0V
V_GS = -30V, V_DS = 0V
R_DS(ON)
Static drain to source on-state resistance ID = 10A, VGS = 10V
V_GS(TH)
g_FS
Gate threshold voltage
Forward transconductance
V_GS=V_DS, I_D=250μA
3.0
V_DS=40V, I_D=10A
C_ISS
Input capacitance
C_OSS
Output capacitance
V_DS = 25V, V_GS = 0V, f =1MHz
C_RSS
Reverse transfer capacitance
t_d(ON)
Turn-on delay time
t_r
t_d(OFF)
Rise time
Turn-off delay time
V_DD = 250V, V_GS = 10V, I_D = 20A
R_GS = 25Ω(Note 1, 2)
t_f
Fall time
Q_G
Q_GS
Q_GD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V_DD = 400V, V_GS = 10V, I_D = 20A
(Note 1, 2)
E_AS
Single pulse avalanche energy(Note 3)
I_AS= 20A, L=5.0mH
Typ.
0.5
0.20
24.6
2400
355
27
95
375
100
105
46
15
22
Max.
25
250
100
-100
0.23
5.0
3120
465
200
760
210
220
60
1110
UNIT
V
V/ºC
μA
nA
Ω
V
S
pF
ns
nC
mJ
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
V_SD
Diode forward voltage
I_SD = 20A, V_GS = 0V
1.4
V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
20
diode in the MOSFET
D (Drain)
I_SM
Pulsed source current
G
(Gate)
S (Source)
t_rr
Reverse recovery time
Q_rr
Reverse recovery charge
I_SD = 20A, V_GS = 0V,
dI_F/dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
3. I_AS=20A, V_DD=50V, L=5.0mH, R_GS= 25Ω, starting T_J=25°C.
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A
80
500
ns
7.2
μC