20N50 Datasheet, PDF (5/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
VGS
Top: 15V
10V
8V
7V
6.5V
6V
10^{1 Bottorm: 5.5V}
10⁰
10^-1
10^-1
Note:
1. 250µs Pulse Test
2. T_C = 25°C
10⁰
10¹
Drain-Source voltage, V_DS (V)
Fig.3 On-Resistance variation vs. drain
current and gate voltage
0.8
20N50 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
10²
150ºC
10¹
25ºC
-55ºC
10⁰
2
Note:
1. VDS = 40V
2. 250µs Pulse Test
4
6
8
10
12
Gate-Source voltage, V_GS (V)
Fig.4 Body diode forward voltage variation
vs. Source current and Temperatue
0.6
V_GS = 10V
0.4
0.2
0.0
0
V_GS = 20V
Note:
TC = 25°C
15
30
45
60
75
90
Drain current, I_D(A)
Fig.5 Capacitance characteristics
6000
5000
4000
3000
2000
1000
0
10^-1
Coss
Ciss = Cgs +Cgd (Cds = shorted )
Coss = Cds +Cgd
Crss = Cgd
Crss
Ciss
Note:
1. VGS = 0V
2. f = 1 MHz
10⁰
10¹
Drain-Source voltage, V_DC (V)
150ºC
10¹
25ºC
Note:
1. V_GS = 0V
2. 250µs Pulse Test
10⁰
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain voltage, V_SD (V)
Fig.6 Gate charge characteristics
12
10
8
6
4
2
0
0
VDS = 100V
VDS = 250V
VDS = 400V
Note: l_D = 20A
10
20
30
40
50
Total gate charge, Q_G (nC)
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