20N50 Datasheet, PDF (1/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
20N50 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(20A, 500Volts)
DESCRIPTION
The Nell 20N50 is a three-terminal silicon
device with current conduction capability
of 20A, fast switching speed, low on-state
resistance, breakdown voltage rating of 500V,
and max. threshold voltage of 5 volts.
They are designed for use in applications
such as switched mode power supplies, DC
to DC converters, motor control circuits, UPS
and general purpose switching applications.
D
G
D
S
TO-3PB
(20N50B)
D (Drain)
FEATURES
R_DS(ON) = 0.23Ω@V_GS = 10V
Ultra low gate charge(60nC max.)
Low reverse transfer capacitance
(C_RSS = 27pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
I_D (A)
V_DSS (V)
R_DS(ON) (Ω)
Q_G(nC) max.
20
500
0.23 @ V_GS = 10V
60
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
Drain to Source voltage
T_J=25°C to 150°C
V_DGR
Drain to Gate voltage
R_GS=20KΩ
V_GS
Gate to Source voltage
I_D
Continuous Drain Current
T_C=25°C
T_C=100°C
I_DM
Pulsed Drain current(Note 1)
I_AR
Avalanche current(Note 1)
E_AR
Repetitive avalanche energy(Note 1)
I_AR=20A, R_GS=50Ω, V_GS=10V
dv/dt
Peak diode recovery dv/dt(Note 2)
Total power dissipation
P_D
(Derating factor above 25°C)
T_C=25°C
T_J
T_STG
T_L
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
500
500
±30
20
12.4
80
20
25
4.6
UNIT
V
A
mJ
V /ns
280 (2.3) W(W/°C)
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.I_SD ≤ 20A, di/dt ≤ 200A/µs, V_DD ≤ V_(BR)DSS, starting T_J=25°C.
www.nellsemi.com
Page 1 of 7