TIP31 Datasheet, PDF (4/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40-100V,40W)

SEMICONDUCTOR
Fig.8 Collector saturation region
2.0
T_J = 25°C
1.6
1.2
I_C = 0.3A 1. 0A
0.8
3. 0A
0.4
0
1.0 2.0 5.0 10 20 50 100 200 500 1000
Base current, I_B (mA)
TIP31 (NPN) Series
TIP32 (PNP) Series ^RRooHHSS
Nell High Power Products
Fig.9 “On” voltages
1.4
1.2
T_J = 25°C
1.0
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE @ V_CE = 2.0V
0.4
0.2
V_CE(sat) @ I_C/I_B = 10
0
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
Collector Current, l_C (A)
Fig.10 Temperature coeffcients
+2.5
+2.0
+1.5
APPLIES FOR I_CE/I_B ≤ h_FE/2
T_J = -65˚C to +150˚C
+1.0
+0.5
0
*θ_VC FOR V_CE(sat)
-0.5
-1.0
-1.5
-2.0
θ_VB FOR V_BE
-2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
Collector Current, l_C (A)
Fig.11 Collector cut-off region
3
10
2
V_CE = 30V
10
1
T_J = 150°C
10
0
10
100°C
-1
10
Reverse
Forward
-2
10
25°C
-3
10
-0.4 -0.3 -0.2 -0.1
I_CES
0 +0.1 +0.2+0.3+0.4 +0.5 +0.6
Bese-emitter voltage, V_BE (V)
Fig.12 Effects of base-emitter resistance
7
10
6
I_C = 10×I_CES
V_CE = 30V
10
5
10
I_C ≈ I_CES
4
10
I_C = 2×I_CES
3
10
2
10
20
(Typical I_CES values
obtained from flgure 11)
40 60 80 100 120 140 160
Junction temperature, T_J (˚C)
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