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TIP31 Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40-100V,40W)
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SEMICONDUCTOR
TIP31 (NPN) Series
TIP32 (PNP) Series RRooHHSS
Nell High Power Products
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
Rth(j-a)
Maximum thermal resistance, junction to ambient
VALUE
3.1
62.5
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
Off Characteristics
VCEO(SUS) Collector to emitter sustaining voltage (Note 1) lC = 30mA, IB=0
TIP31,TIP32
TIP31A,TIP32A
TIP31B,TIP32B
ICEO
Collector cutoff current
IEBO
Emitter cutoff current
ICES
Collector cutoff current
On Characteristics
TIP31C,TIP32C
VCE = 30V, IB = 0
TIP31,TIP32
TIP31A,TIP32A
VCE = 60V, lB = 0
TIP31B,TIP32B
TIP31C,TIP32C
VEB = 5V, IC = 0
VCE = 40V, VEB = 0 TIP31,TIP32
VCE = 60V, VEB = 0 TIP31A,TIP32A
VCE = 80V, VEB = 0 TIP31B,TIP32B
VCE = 100V, VEB = 0 TIP31C,TIP32C
hFE
VCE(sat)
Forward current transfer ratio (DC current gain)
Collector to emitter saturation voltage (Note1)
VCE = 4V, IC = 1.0A
VCE = 4V, IC = 3A
lC = 3A, lB = 0.375A
VBE(on) Base to emitter voltage (Note1)
Dynamic Characteristics
lC = 3A, VCE = 4V
fT
Current gain - Bandwidth product (note 2)
hfe
Small signal current gain
lC = 0.5A, VCE = 10V, ftest = 1MHz
lC = 0.5A, VCE = 10V, f = 1KHz
MIN
40
60
80
100
25
10
3.0
20
MAX
0.3
1.0
200
200
200
200
75
1.2
1.8
V
mA
µA
V
MHZ
Note 1. Pulsed : Pulse duration ≤ 300 µS, duty cycle ≤ 2.0%.
Note 2. fT = |hfe| • fTEST
Note 3. For PNP type voltage and current are negative.
TC TA
40 4.0
Fig.1 Power derating
30 3.0
TC
20 2.0
10 1.0
TA
00
0
20 40 60 80 100 120 140 160
Temperature (˚C)
Fig 2. Switching Time Equivalent Circuit
TURNON PULSE
VCC
APPROX
RC
+11 V
Vin 0
VEB(off)
APPROX
+11 V
Vin
t1
t3
Vin
R
B
Cjd << Ceb
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
-4.0 V
SCOPE
t2
DUTY CYCLE ≈ 2.0%
TURNOFF PULSE APPROX 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
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