TIP31 Datasheet, PDF (1/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40-100V,40W)

SEMICONDUCTOR
TIP31 (NPN) Series
TIP32 (PNP) Series ^RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistor
3A/40~100V/40W
FEATURES
Complementary NPN-PNP transistors
Low collector-emitter saturation voltage
Satisfactory linearity of foward current
transfer ratio h_FE
TO-220AB package which can be installed
to the heat sink with one screw
Collector - Emitter Saturation Voltage:
V_CE(sat) = 1.2V_dc (MAX.) @ I_C = 3A
Collector - Emitter Saturation Voltage:
V_CEO(sus) = 40V_dc (Min.) - TIP31,TIP32
= 60V_dc (Min.) - TIP31A,TIP32A
= 80V_dc (Min.) - TIP31B, TIP32B
= 100V_dc (Min.) - TIP31C, TIP32C
DC Current Gain h_FE = 25 (Min.) @ I_c = 1.0A
High Current Gain - Bandwidth product
f_T = 3.0 MHz (Min.) @ I_c=0.5A
APPLICATIONS
Audio amplifier
General purpose switching and amplifier
C
B
C
E
TO-220AB
C
B
E
TIP31(NPN)
C
B
E
TIP32(PNP)
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C)
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_C
T_j
T_stg
E
Collector to base voltage (I_E = 0)
Collector to emitter voltage (I_B = 0)
Emitter to base voltage (I_C = 0)
Collector current
Collector peak current (t_p < 5mS)
Base current
Collector power dissipation
(Derate above 25°C)
Junction temperature
@T_C = 25°C
@T_A = 25°C
Storage temperature
Unclamped inductive load energy (Note 1)
TIP31
TIP32
40
40
VALUE
TIP31A TIP31B TIP31C
TIP32A TIP32B TIP32C
60
80
100
60
80
100
5
UNIT
V
3
5
A
1
40 (0.32)
2.0 (0.016)
W(W/°C)
150
ºC
-65 to 150
32
mJ
Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:
I_C = 1.8A, L = 20mH, R_BE = 100Ω, P.R.F = 10Hz, V_CC = 20V
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