TIP31 Datasheet, PDF (3/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40-100V,40W)

SEMICONDUCTOR
Fig.3 Turn-on time
2.0
I_C/I_B = 10
1.0
T_J = 25°C
0.7
t_r @ V_CC = 30V
0.5
0.3
t_r @ V_CC = 10V
0.1
0.07
0.05
0.03
0.02
0.03 0.05 0.1
t_d @ V_EB(off) = 2.0V
0.3 0.5 1.0
3.0
Collector Current, l_C (A)
TIP31 (NPN) Series
TIP32 (PNP) Series ^RRooHHSS
Nell High Power Products
Fig.4 Turn-off time
3.0
2.0
t_S’
1.0
0.7
t_f @ V_CC = 30V
0.5
0.3 tf @ VCC = 10V
0.2
I_B1= I_B2
I_C / I_B = 10
t_S’ = t_S - 1/8t_f
T_J = 25°C
0.1
0.07
0.05
0.03
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
Collector emitter , I_C (A)
Fig.5 Active region safe operating area
10
5.0
100µs
5.0ms
2.0
1.0ms
1.0
Second Breakdown Limited
@ TJ ≤ 150˚C
0.5
Thermal limit @ T_J = 25˚C
(Single pulse)
Bonding wire limit
0.2
CURVES APPLY
TIP31A,TIP32A
TIP31B,TIP32B
BELLOW RATED VCEO _{TIP31C,TIP32C}
0.1
5.0
10
20
50
100
Collector-emitter voltage , V_CE (V)
Fig.6 Capacitance
300
T_J = +25°C
200
100
C_eb
70
50
C_cb
30
0.1 0.2 0.3 0.5 1.0 2 3 5 7 10 20 30 40
Reverse voltage, V_R (V)
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Sa fe operating area curves indicate l_C-V_CE
limits of the tra nsistor that must be observe d for re liable
op er at ion ; i.e. , the tran sistor mus t no t be sub jec ted to
The data of fig.5 is based on T_J(pk) = 150°C; T_C is variable
depending on conditions. Second breakdown pulse limits are valid
fo r duty cycles to 10% pro vided T_J(pk) ≤ 150°C T_J(pk) may be
calulated form the data in Figure 13. At high case
temperatures, thermal limitations will reduce the power
that can be handled to valuesless than the limitations
by second breakdown.
Fig.7 Dc current gain
500
300 TJ = 150°C
V_CE = 2.0V
100
25°C
70
-55°C
50
30
10
7.0
5.0
0.03 0.05 0.1
0.3
1.0
3.0
Collector current, I_C (A)
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