NSGM300GB12B Datasheet, PDF (4/4 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 300A

SEMICONDUCTOR
NSGM300GB..B Series RRooHHSS
Fig. 9 Transient thermal impedance of IGBT
Z_thp(j-c) = f (t_p); D = t_p/tc = t_p *f
0.1
K/W
0.01
0.001
0.0001
single pulse
Z_thJC
0.00001
0.00001
tp
0.0001
0.001
0.01
D=0.50
0.20
0.10
0.05
0.02
0.01
0.1
1
s
Fig.11 CAL diode forward characteristic
400
A
300
Tj =125°C, typ
Tj = 25°C, typ
200
100
I_F
0
0
1
V_F
2
3
V
Fig. 10 Transient thermal impedance of FWD
Z_thp(j-c) = f (t_p); D = t_p/tc = t_p *f
1
K/W
0.1
0.01
0.001
Z_thJC
single pulse
0.0001
0.00001 0.0001
tp
0.001
0.01
D=0.5
0.2
0.1
0.05
0.02
0.01
0.1
1
s
Fig. 12 Typ. CAL diode peak reverse
recovery cyrrebt
500
A
V_cc = 600V
T_j = 125°C
400
V_GE = ± 15V
l_F = 200A
R_G=
1.5
300
3.5Ω
200
6Ω
100
l_RR
10Ω
25Ω
0
0
5000
di_F/dt
10000
15000
A/µs
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