NSGM300GB12B Datasheet, PDF (2/4 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 300A

SEMICONDUCTOR
NSGM300GB..B Series RRooHHSS
Dynamic electrical characteristics , Tj=25 C unless otherwise specified
Symbol
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time , Resistive
Rise time , Load
Turn-off delay time , Switching
Fall time , Times
Diode reverse recovery time
Diode reverse recovery charge
Condition
VGE=0V , VCE=25V
f=1MHz
VCC=600V , IC=300A
VGE1=VGE2=+15V , RG=5Ω
IC=-190A , di/dt=-150A/_μs
IC=-190A , di/dt=-150A/_μs
Min.
Typ. Max.
30
2
1.6
220
60
530
350
250
12
Unit
nF
ns
ns
μ^C
Thermal and mechanical characterisitics , Tj=25 C unless otherwise specified
Symbol
Rth(j-c)
Rth(c-f)
Parameter
Condition
Min.
Per IGBT
Thermal resistance , junction to case
Per FWDi
Contact thermal resistance
Per module , thermal grease applied
Typ.
Max.
0.09
0.24
0.05
Unit
C/W
C/W
Fig.1 Typ. output characteristic ,t_p=80 µs; 125°C
400
A
17V
300
15V
13V
11V
9V
200
7V
100 ^{tp = 80 µs}
Tj = 120°C
lc
0
0
1
2
3
4
5
6
VCE
V
Fig.2 Rated current vs. temperature l_c = f (T_c)
320
A
T_j = 150°C
280
V_GE ≥ 15 V
240
200
160
120
80
40
l_c
0
0 20 40 60 80 100 120 140 160
T_c
°C
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