NSGM300GB12B Datasheet, PDF (3/4 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 300A

SEMICONDUCTOR
NSGM300GB..B Series RRooHHSS
Fig.3 Typ. turn-on/off energy = f (l_c)
30
mWs
T_j = 125°C
25
V_CE = 600V
V_GE = ±15V
R_G = 3 Ω
20
E_on
Fig. 4 Typ. turn-on/off energy = f (F_G)
80
mWs
T_j = 125°C
V_CE = 600V
60
V_GE = ±15V
I_c = 200 A
E_on
15
10
E_off
5
E
0
0
100
l_c
200
300
A
Fig. 5 Typ. transfer characteristic,
tp = 80µs;V_CE = 20V
40
E_off
20
E
0
0
5
RG
10
15
20
25
Ω
Fig. 6 Typ. gate charge characteristic
400
tp = 80 µs
A VCE = 20 V
300
200
100
l_C
0
0
24
6
8 10 12 14
VG
V
20
V
18
I_Cpuls = 300A
16
14
12
10
8
6
4
2
V_GE
0
0
500
Q_Gate
1000
600
800V
1500 2000 2500
nC
Fig. 7 Typ. switching times vs. l_C
1000
ns
100
t_doff
T_j = 125°C; V_CE = 600V; V_GE = ± 15 V
R_Gon = 2 Ω; R_Goff = 3 Ω; induct. load
t_don
t_r
t_r
t
Fig.8 Typ. switching times vs. gate resistor R_G
ns
1000
T_j = 125°C; V_CE = 600V; V_GE = ± 15 V
l_C = 200 A; induct.load
t_doff
t_don
t_r
t_r
t
10
0 l_C 50 100 150 200 250 300 350 400
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10
0
5
R_G
10 15 20 25 30
Ω