NSGM300GB12B Datasheet, PDF (1/4 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 300A

SEMICONDUCTOR
NSGM300GB..B Series RRooHHSS
Features ^{IGBT Module (2 in one-package), 300A}
1. High frequency operation
2. Low losses and soft switching
3. Isolated baseplate for easy heat sinking
4. Discrete super-fast recovery free-wheel diode
5. Small temperature dependence of the turn-off switching loss
Typical Applications
AC Motor Control
DC Motor Control
UPS
Welding Power Supplies
Inverter
48.5
25
25
Electronic welders at fsw up to 20kHz
Ordering code
NSGM 300 GB xx B
(1) (2) (3) (4) (5)
C2E1
E2
C1
3-M6
93+0.3
108+0.5
4- 6.5
(1) For IGBT module
(2) Maximum average forward current , A
(3) 2 in one-package
14
14
14
2.8
4-0.5
(4) Voltage code , V ( code x 10 = / VRRM )
(5) Case style
C2E1
E2
C1
All dimensions in millimeters
Electrical Characteristics
Absolute maximum ratings , Tj=25 C unless otherwise specified
Symbol
IC
ICM
Pc
VCES
VGES
Viso
Tj
Tstg
T
Wt
Parameter
Collector current
Peak collector current
Maximum collector dissipation
Collector-emitter voltage
Gate-emitter voltage
Isolation voltage
Junction temperature
Storage temperature
Mounting torque , M6 main terminal
Mounting torque , M6 mounting
Approximate weight
Condition
Max. Value
Tc=80 C
Tc=25 C
Tc=25 C , Tj<150 C
300
600
2100
G-E Short
1200
C-E Short
+20
Main terminal to baseplate , AC 1 min 3000
-40 to 150
-40 to 125
3 to 5
3 to 5
370
Unit
A
A
W
V
V
V
C
C
N.m
g
Static electrical characteristics , Tj=25 C unless otherwise specified
Symbol
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
Parameter
Condition
Collector-cutoff current
Gate leakage current
VCE=VCES , VGE=0V
VGE=+20V , VCE=0V , TJ=125 C
Gate-emitter threshold voltage
Collector-emitter saturation voltage
IC=6mA , VCE=VGE , TJ=25 C
IC=300A , VGE=15V , TJ=25 C
IC=300A , VGE=15V , TJ=125 C
Total gate charge
Emitter-collector voltage
IC=-190A , VGE=0V
Min.
5
Typ.
6.2
2
2.3
3060
Max.
1.0
200
7
2.2
Unit
mA
μ^A
V
V
nC
V
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