NP82P04PLF Datasheet, PDF (6/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP82P04PLF
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
No plating
10.0±0.3
7.88 MIN.
4
4.45±0.2
1.3±0.2
0.025 to
0.25
0.5
0.75±0.2
2.54
12 3
0.6±0.2
0 _{to 8 o}
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
6
Data Sheet D18718EJ2V0DS