NP82P04PLF Datasheet, PDF (1/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82P04PLF
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP82P04PLF-E1-AY ^Note
NP82P04PLF-E2-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP)
FEATURES
• Super low on-state resistance
RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A)
RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A)
• Low input capacitance
Ciss = 5000 pF TYP.
• Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Repetitive Avalanche Current ^Note2
IAR
Repetitive Avalanche Energy ^Note2
EAR
−40
V
m20
V
m82
A
m246
A
150
W
1.8
W
175
°C
−55 to +175 °C
46
A
212
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = −20 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.0
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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Document No. D18718EJ2V0DS00 (2nd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
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2007