NP82P04PLF Datasheet, PDF (4/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

-400
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-300
VGS = −10 V
-200
−4.5 V
-100
Pulsed
0
0 -1 -2 -3 -4 -5 -6 -7
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-3
-2.5
-2
-1.5
-1
-0.5 VDS = −10 V
ID = −1 mA
0
-75
-25
25
75 125 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
10
VGS = −4.5 V
−10 V
Pulsed
0
-1
-10
-100
-1000
ID - Drain Current - A
NP82P04PLF
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
VDS = −10 V
Pulsed
-10
-1
-0.1
-0.01
-0.001
0
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
100
Tch = −55°C
−25°C
25°C
75°C
125°C
10
150°C
175°C
1
VDS = −10 V
Pulsed
0.1
-0.1
-1
-10
-100
ID - Drain Current - A
-1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
15
ID = −65.6 A
−41 A
−16.4 A
10
5
Pulsed
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
4
Data Sheet D18718EJ2V0DS