NP82P04PLF Datasheet, PDF (3/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP82P04PLF
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
ID(pulse)
-100
-10
ID(DC)
R^D₍^S_V^{(oGnS) L=im−1iit0edV)}
DC
PW
= _{1i00 μs}
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
180
150
120
90
60
30
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
-1
-0.1
TC = 25°C
Single Pulse
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3°C/Wi
100
10
Rth(ch-C) = 1.0°C/Wi
1
0.1
0.01
100 μ
1m
10 m 100 m
1
Single Pulse
10
100
1000
PW - Pulse Width - s
Data Sheet D18718EJ2V0DS
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