NP82N055CHE Datasheet, PDF (5/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
Pulsed
16
14
12
VGS = 10 V
10
8
6
4
2
ID = 41 A
0
−50
0
50 100 150
Tch - Channel Temperature - ˚C
1000
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
VGS = 10 V
100
VGS = 0 V
10
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
100
0.1
Coss
Crss
1
10
100
VDS - Drain to Source Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
tr
10
td(off)
td(on)
1
0.1
1
10
100
ID - Drain Current - A
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
VGS
12
VDD = 44 V
28 V
10
11 V
40
8
6
20
4
2
VDS
ID = 82 A
0
0
20
40
60
80
QG - Gate Charge - nC
Data Sheet D14138EJ5V0DS
5