NP82N055CHE Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 3500 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP82N055CHE
TO-220AB
NP82N055DHE
TO-262
NP82N055EHE
5
NP82N055KHE
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) ^Note1
ID(DC)
±82
A
Drain Current (pulse) ^Note2
ID(pulse)
±300
A
Total Power Dissipation (TA = 25°C)
PT
1.8
W
Total Power Dissipation (TC = 25°C)
PT
163
W
Channel Temperature
Tch
175
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg
–55 to +175 °C
IAS
72 / 49 / 17
A
EAS
51 / 240 / 289 mJ
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW ≤ 10 µs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.)
(TO-262)
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.92
°C/W
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14138EJ5V0DS00 (5th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
1999