NP82N055CHE Datasheet, PDF (3/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure.3 FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R(a^D_t^S(V^{onG) SL=im1it0edV )}
ID(pulse)
ID(DC)
LimPoitweder
DC
Dissipation
1 _ms
PW ₌
100 _µs
10
µ_s
1
TC = 25˚C
0.1 ^{Single Pulse}
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
350
300 _{289 mJ}
240 mJ
250
IAS = 17 A
200
49 A
72 A
150
100
51 mJ
50
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3˚C/W
10
1
Rth(ch-C) = 0.92˚C/W
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10
100
1000
Data Sheet D14138EJ5V0DS
3