NP82N055CHE Datasheet, PDF (4/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
100
TA = −55˚C
25˚C
75˚C
150˚C
10
175˚C
1
0.1
2
3
4
VDS = 10 V
5
6
7
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = 10 V}
Pulsed
10
TA = 175˚C
1
75˚C
25˚C
−50˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
Pulsed
10
VGS = 10 V
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
250
VGS =10 V
200
150
100
50
0
Pulsed
0
1
2
3
4
5
6
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
10
ID = 41 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
VDS = VGS
ID = 250 µA
3.0
2.0
1.0
0
−50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14138EJ5V0DS