2SC5752 Datasheet, PDF (5/20 Pages) NEC – NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
VCE = 3.2 V
f = 0.9 GHz
250
Pout
ICq = 10 mA (RF OFF)
20
200
15
GP
150
10
100
IC
5
ηC
50
0
–10
–5
0
0
5
10
15
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
250
VCE = 2.8 V
f = 1.8 GHz
ICq = 10 mA (RF OFF)
20
Pout
200
15
150
GP
10
100
ηC
5
0
–5
0
50
IC
0
5
10
15
20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
250
VCE = 3.2 V
f = 2.4 GHz
ICq = 10 mA (RF OFF)
20
Pout
200
15
10
5
0
–5
GP
ηC
IC
0
5
10
15
Input Power Pin (dBm)
150
100
50
0
20
2SC5752
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
250
VCE = 3.2 V
f = 1.8 GHz
ICq = 10 mA (RF OFF) Pout
20
200
15
10
5
0
–5
GP
ηC
IC
0
5
10
15
Input Power Pin (dBm)
150
100
50
0
20
Data Sheet P15658EJ1V0DS
5