2SC5752 Datasheet, PDF (2/20 Pages) NEC – NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

2SC5752
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
Symbol
R ^Note
th j-a
Value
610
Note Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PCB
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO
h ^{Note 1}
FE
VBE = 1 V, IC = 0 mA
VCE = 3 V, IC = 30 mA
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
Insertion Power Gain
S21e² VCE = 3 V, IC = 30 mA, f = 2 GHz
Noise Figure
NF ^{VCE = 3 V, IC = 7 mA, f = 2 GHz,}
ZS = Zopt
Reverse Transfer Capacitance
C Note 2
re
VCB = 3 V, IE = 0 mA, f = 1 MHz
Maximum Available Power Gain
MAG ^Note3 VCE = 3 V, IC = 30 mA, f = 2 GHz
Linear Gain
GL
VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = −5 dBm
Gain 1 dB Compression Output Power PO (1 dB) ^{VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,}
Pin = 7 dBm
Collector Efficiency
ηC
VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
MIN.
−
−
75
−
8.0
−
−
−
−
−
−
TYP.
−
−
120
12.0
10.0
1.7
0.46
13.0
12.5
18.0
55
MAX.
100
100
150
−
−
2.5
0.7
−
−
−
−
Unit
nA
nA
−
GHz
dB
dB
pF
dB
dB
dBm
%
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG = ^S21 (K – √ (K² – 1) )
S12
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
R55
75 to 150
2
Data Sheet P15658EJ1V0DS