2SC5752 Datasheet, PDF (3/20 Pages) NEC – NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

2SC5752
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy PCB
(1.08 cm² × 1.0 mm (t) )
250
200
150
100
50
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
0
1
2
3
4
5
6
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 3 V
10
1
0.1
0.01
0.001
0.0001
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
90
700 µA
80
600 µA
70
500 µA
60
400 µA
50
40
300 µA
30
200 µA
20
10
IB = 100 µA
0
2
4
6
8
Collector to Emitter Voltage VCE (V)
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
10
0.1
1
10
100
Collector Current IC (mA)
Data Sheet P15658EJ1V0DS
3