2SC5752 Datasheet, PDF (1/20 Pages) NEC – NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5752
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
4-PIN SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• 4-pin super minimold package
ORDERING INFORMATION
Part Number
2SC5752
2SC5752-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9.0
V
Collector to Emitter Voltage
VCEO
6.0
V
Emitter to Base Voltage
VEBO
2.0
V
Collector Current
Total Power Dissipation
IC
P ^Note
tot
100
200
mA
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15658EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
Printed in Japan
©
2001