HD1 Datasheet, PDF (4/6 Pages) NEC – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

HD1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Collector saturation voltage VCE(sat) **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
IC = 0.7 A, IB = 7 mA
VCE = 5.0 V, IC = 100 µA
HD1 SERIES
MIN.
TYP.
MAX.
Unit
100
nA
200
630
−
300
780
−
200
430
−
0.25
0.4
V
0.5
0.3
V
−
−
−
Ω
7
10
13
kΩ
4
Data Sheet D16182EJ2V0DS