HD1 Datasheet, PDF (1/6 Pages) NEC – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

DATA SHEET
COMPOUND TRANSISTOR
HD1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• High current drives such as IC outputs and actuators available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HD1 SERIES LISTS
Products
Marking
HD1A3M
LP
HD1F3P
LQ
HD1L3N
LR
HD1A4M
LS
HD1L2Q
LT
HD1F2Q
LU
HD1A4A
LX
R1 (KΩ)
1.0
2.2
4.7
10
0.47
0.22
−
R2 (KΩ)
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (Pulse)
IC(pulse) *
2.0
A
Base current (DC)
IB(DC)
0.02
A
Total power dissipation
PT **
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
** When 0.7 mm × 16 cm² ceramic board is used
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16182EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928