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HD1 Datasheet, PDF (2/6 Pages) NEC – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |||
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HD1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ⤠350 µs, duty cycle ⤠2 %
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.4 A
VCE = 5.0 V, IC = 100 µA
HD1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ⤠350 µs, duty cycle ⤠2 %
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.3 A
VCE = 5.0 V, IC = 100 µA
HD1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ⤠350 µs, duty cycle ⤠2 %
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 100 µA
HD1 SERIES
MIN.
TYP.
MAX.
Unit
100
nA
80
â
200
â
200
â
0.35
V
0.3
V
0.7
1.0
1.3
kâ¦
0.7
1.0
1.3
kâ¦
MIN.
TYP.
MAX.
Unit
100
nA
200
630
â
300
780
â
200
430
â
0.12
0.3
V
0.5
0.3
V
1.54
2.2
2.86
kâ¦
7
10
13
kâ¦
MIN.
TYP.
MAX.
Unit
100
nA
200
â
300
â
200
â
0.2
V
0.3
V
3.29
4.7
6.11
kâ¦
7
10
13
kâ¦
2
Data Sheet D16182EJ2V0DS
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