HD1 Datasheet, PDF (3/6 Pages) NEC – on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

HD1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.1 A
VCE = 5.0 V, IC = 100 µA
HD1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.8 A
VCE = 5.0 V, IC = 100 µA
HD1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.8 A
VCE = 5.0 V, IC = 100 µA
HD1 SERIES
MIN.
TYP.
MAX.
Unit
100
nA
200
−
300
−
200
−
0.2
V
0.3
V
7
10
13
kΩ
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
200
−
300
−
200
−
0.5
V
0.3
V
329
470
611
Ω
3.29
4.7
6.11
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
100
−
300
−
200
−
0.5
V
0.3
V
154
220
286
Ω
1.54
2.2
2.86
kΩ
Data Sheet D16182EJ2V0DS
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