3SK131 Datasheet, PDF (4/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NOISE FIGURE vs. DRAIN CURRENT
f = 200 MHz
VDS = 10 V
VG2S = 5 V
4.0
VDS = 5 V
VG2S = 3 V
3.0
2.0
1.0
0
2
4
6
8
10
ID-Drain Current=mA
3SK131
NOISE FIGURE, POWER GAIN vs.
GATE2 TO SOURCE VOLTAGE
f = 200 MHz
30 VDS = 10 V
VDS = 5 V
20
Gps
4
3
10
2
0
NF
1
−10
0
−1 0 1 2 3 4 5 6 7 8
VG2S-Gate 2 to Source Voltage-V
TEST CIRCUIT
VG2S
1000 pF
22 kΩ
1000 pF
INPUT ^{7 pF}
50 Ω
L1
1000 pF
15 pF
200 Ω
22 kΩ
1000 pF
1000 pF
TEST CONDITION
VDS = 10 V, VG2S = 5 V, ID = 10 mA
f = 200 MHz
L2
7 pF _OUTPUT
L1: φ 0.6 mm U.E.W. 7 mm 3T
L2: φ 0.6 mm U.E.W. 7 mm 3T
L3: RFC 2.2 µ H
1000 pF
50 Ω
15 pF
L3
1000 pF
VG1S
VDS
4