3SK131 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DDAATTAA SSHHEEEETT
MOS FIELD EFFECT TRANSISTOR
3SK131
RF AMP. FOR VHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
FEATURES
• Suitable for use as RF amplifier in VHF TV tuner.
• Low Crss : 0.05 pF TYP.
• High Gps : 23 dB TYP.
• Low NF : 1.3 dB TYP.
PACKAGE DIMENSIONS
(Unit: mm)
+0.2
2.8 −0.3
+0.2
1.5 −0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Drain to Source Voltage
VDSX
20
V
Gate1 to Source Voltage
VG1S

8
V
Gate2 to Source Voltage
VG2S

8
V
Drain Current
ID
25
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
125
C
Storage Temperature
Tstg
55 to +125 C
5°
5°
5°
5°
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Drain to Source Breakdown Voltage BVDSX
20
Drain Current
IDSS
7
10
Gate1 to Source Cutoff Voltage
VG1S(OFF)
Gate2 to Source Cutoff Voltage
VG2S(OFF)
Gate1 Reverse Current
IG1SS
Gate2 Reverse Current
Forward Transfer Admittance
IG2SS
yfs
22
28
MAX.
25

2.0

1.5
20
20
Input Capacitance
Ciss
4.0
5.0
6.5
Output Capacitance
Coss
2.2
2.9
3.7
Reverse Transfer Capacitance
Crss
0.05
0.08
Power Gain
Cps
21
24
Noise Figure
NF
1.2
2.5
IDSS classification V11 7-13 mA V12 11-19 mA V13 17-25 mA
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
UNIT
V
mA
V
V
nA
nA
mS
pF
pF
pF
dB
dB
TEST CONDITIONS
VG1S = VG2S =
2 V, ID = 10
A
VDS = 6 V, VG2S = 3 V, VG1S = 0
VDS = 8 V, VG2S = 0, ID = 5
A
VDS = 8 V VG1S = 0, ID = 5
A
VDS = 0, VG1S = 8 V, VG2S = 0
VDS = 0, VG2S = 8 V, VG1S = 0
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 kHz
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 MHz
VDS = 10 V, VG2S = 5 V, ID = 10 mA
f = 200 MHz
Document No. P12449EJ2V0DS00 (2nd edition)
(Previous No. TC-1508)
Date Published March 1997 N
Printed in Japan
©
1983