3SK131 Datasheet, PDF (3/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
VDS = 6.0 V
f = 1.0 MHz
4.0
VG1S = 0 V
3.0
−0.5 V
2.0
1.0
0
−1.0
0
1.0
2.0
3.0
4.0
VG2S-Gate 2 to Source Voltage-V
FORWARD TRANSFER ADMITTANCE (yfs)
vs. FREQUENCY
gfs-Forward Transfer Conductance-mS
10
20
−5
VDS = 6 V
100 MHz
30
VG2S = 3 V
ID = 10 mA
−10
200 MHz
300 MHz
−15
OUTPUT ADMITTANCVE (yos)
vs. FREQUENCY
5
VDS = 6 V
300 MHz
VG2S = 3 V
ID = 10 mA
4
200 MHz
3
2
100 MHz
1
0
0.5
1.0
gos-Output Conductance-mS
3SK131
INPUT ADMITTANCE (yis)
vs. FREQUENCY
10
VDS2 = 6 V
VG2S = 3 V
ID = 10 mA
300 MHz
200 MHz
5
100 MHz
0
1
2
gis-Input Conductance-mS
REVERSE TRANSFER ADMITTANCE (yrs)
vs. FREQUENCY
grs-Reverse Transfer Conductance-mS
0
0.1
0.2
VDS = 6 V
VG2S = 3 V
ID = 10 mA
300 MHz
−0.1
200 MHz
100 MHz
−0.2
POWER GAIN vs. DRAIN CURRENT
25
20
15
f = 200 MHz
10
VDS = 10 V
VG2S = 5 V
VDS = 5 V
VG2S = 3 V
5
0
2
4
6
8
10
ID-Drain Current=mA
3