3SK131 Datasheet, PDF (2/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0
25
50
75
100
125
Ta-Ambient Temperature-°C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
20
1V
10
VG2S = 0
−1.0
0
VG1S-Gate 1 to Source Voltage-V
+1.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
25
20
15
10
VDS = 6 V
5
VG2 = 3 V
f = 1.0 kHz
0
10
20
ID-Drain Current-mA
2
3SK131
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
VG2 = 3.0 V
VG1S = 0 V
−0.1
10
−0.2
−0.3
−0.4
−0.5
−0.6
0
10
20
VDS-Drain to Source Voltage-V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
VDS = 6 V
40
30
20
VG2S = 5 V
4V
3V
2V
10
1V
0
−1.0
0V
0
1.0
VG1S-Gate 1 to Source Voltage-V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
VDS = 6.0 V
f = 1 MHz
8.0
6.0
VG1S = 0.05 V
4.0
2.0
0
−1.0
0
1.0
2.0
3.0
4.0
VG2S-Gate 2 to Source Voltage-V