2SJ647 Datasheet, PDF (4/6 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
Pulsed
3
VGS = −2.5 V, ID = −0.15 A
2
1
VGS = −4.0 V, ID = −0.2 A
VGS = −4.5 V, ID = −0.2 A
0
-50
0
50
100
150
Tch – Channel Temperrature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
VGS = −4.5 V
Pulsed
3
TA = 125°C
75°C
25°C
2
−25°C
1
0
-0.01
-0.1
-1
-10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
TA = 125°C
3
75°C
VGS = −2.5 V
Pulsed
2
25°C
1
−25°C
0
-0.01
-0.1
-1
-10
ID - Drain Current - A
2SJ647
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
ID = −0.2 A
Pulsed
3
2
1
0
0
-2
-4
-6
-8
-10
-12
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
VGS = −4.0 V
Pulsed
3
TA = 125°C
75°C
2
1
25°C
−25°C
0
-0.01
-0.1
-1
-10
ID - Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
10
Crss
1
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
4
Data Sheet D16530EJ1V0DS