2SJ647 Datasheet, PDF (3/6 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0
25
50
75 100 125 150 175
TA - Ambient Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-1.6
Pulsed
VGS = −4.5 V
-1.2
−4.0 V
-0.8
-0.4
−2.5 V
0
0
-1
-2
-3
-4
-5
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-1.6
VDS = −10 V
ID = −1.0 mA
-1.4
-1.2
-1
-0.8
-0.6
-50
0
50
100
150
Tch – Channel Temperrature - °C
2SJ647
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0.24
0.2
0.16
0.12
0.08
0.04
Mounted on FR-4 board of
2500 mm² x 1.1 mm
0
0
25
50
75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD TRANSFER CHARACTERISTICS
-10
VDS = −10 V
Pulsed
-1
-0.1
-0.01
-0.001
TA = 125°C
75°C
25°C
−25°C
-0.0001
0
-1
-2
-3
-4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = −10 V
Pulsed
TA = −25°C
1
25°C
75°C
125°C
0.1
0.01
-0.001
-0.01
-0.1
-1
-10
ID - Drain Current - A
Data Sheet D16530EJ1V0DS
3