2SJ647 Datasheet, PDF (1/6 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ647
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ647 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ647 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)
RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
2
1
3
Marking
ORDERING INFORMATION
PART NUMBER
2SJ647
Remark Marking: H22
PACKAGE
SC-70 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−20
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) ^Note1
Total Power Dissipation ^Note2
VGSS
m12
V
ID(DC)
m0.4
A
ID(pulse)
m1.6
A
PT
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm² x 1.1 mm.
1 : Source
2 : Gate
3 : Drain
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16530EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2003