2SJ647 Datasheet, PDF (2/6 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = −20 V, VGS = 0 V
VGS = m12 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
Forward Transfer Admittance
| yfs | VDS = −10 V, ID = −0.2 A
Drain to Source On-state Resistance
RDS(on)1 VGS = −4.5 V, ID = −0.2 A
RDS(on)2 VGS = −4.0 V, ID = −0.2 A
RDS(on)3 VGS = −2.5 V, ID = −0.15 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = −10 V, ID = −0.2 A
Rise Time
tr
VGS = −4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Body Diode Forward Voltage
VF(S-D) IF = 0.4 A, VGS = 0 V
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1µs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10%
0
VGS
90%
VDS(−)
90%
VDS
VDS
0
Wave Form
td(on)
10% 10%
tr td(off)
90%
tf
ton
toff
2SJ647
MIN. TYP. MAX. UNIT
−1.0 µA
m10 µA
−0.8 −1.3 −1.8 V
0.2 0.6
S
1.17 1.45 Ω
1.25 1.55 Ω
2.25 2.98 Ω
29
pF
15
pF
3
pF
23
ns
39
ns
50
ns
33
ns
0.93
V
2
Data Sheet D16530EJ1V0DS