2SC4336 Datasheet, PDF (4/5 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

2SC4336
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
12
100 mA
10
50 mA
8
30 mA
6
20 mA
4
IB = 10 mA
2
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE - Collector to Emittor Voltage - V
COLLECTOR SATURATION VOLTAGE AND BASE
SATURATION VOLTAGE vs. COLLECTOR CURRENT
10000
1000
VBE(sat)
100
10
1
0.01
VCE(sat)
IC = 10 • IB
Pulsed
0.1
1
10
100
IC - Collector Current - A
1000
COLLECTOR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
IE = 0
f = 1 MHz
100
10
1
10
100
VCB - Collector to Base Voltage - V
1000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
10
1
0.001
VCE = 2.0 V
Pulsed
0.01 0.1
1
10 100
IC - Collector Current - A
1000
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
100
10
0.01
VCE = 10 V
0.1
1
10
IC - Collector Current - A
TURN ON TIME, STORAGE TIME AND FALL TIME
vs. COLLECTOR CURRENT
10000
tstg
1000
100
10
0.1
tf
ton
IC = 20 A
IB1 = −20 • IB2
1
10
100
IC - Collector Current - A
4
Data Sheet D17261EJ1V0DS