2SC4336 Datasheet, PDF (1/5 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SC4336
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DESCRIPTION
The 2SC4336 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 ±0.2 _{φ 3.2 ±0.2}
4.7 MAX.
3.0 MAX.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Fast switching speed
• Low collector-to-emitter saturation voltage
VCE(sat) ≤ 0.3 V MAX. (IC = 6.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC4336
Isolated TO-220 (MP-45)
0.8 ±0.1
2.54 TYP.
1.3 ±0.2 0.5 ±0.1
1.5 ±0.2
2.54 TYP.
2.5 ±0.1
123
1: Base
2: Collector
3: Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
Collector current (pulse) ^Note
IC(DC)
10
A
IC(pulse)
20
A
Base current (DC)
IB(DC)
6.0
A
Total power dissipation (TC = 25°C)
PT
30
W
Total power dissipation (TA = 25°C)
PT
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note PW ≤ 300 µs, Duty Cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17261EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004