2SC4336 Datasheet, PDF (3/5 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

2SC4336
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
DERATING CURVE OF SAFE OPERATING AREA
100
80
S/b Limited
60
Dissipation Limited
40
20
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
IC(p ulse)
10
IC(DC)
200 ms
1 ms
10 ms
1
DC Dissipation Limited
0.1
Single pulse
TC = 25°C
0.01
0.1
1
10
100
1000
VCE - Collector to Emittor Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 62.5°C/W
10
Rth(ch-C) = 4.17°C/W
1
0.1
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single pulse
100
1000
Data Sheet D17261EJ1V0DS
3