2SC4336 Datasheet, PDF (2/5 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

2SC4336
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
MIN.
Collector to Emitter Voltage
VCEO(SUS) IC = 5.0 A, IB = 0.6 A, L = 1 mH
100
VCEX(SUS) IC = 5.0 A, IB1 = −IB2 = 0.6 A,
100
VBE(OFF) = −1.5 V, L = 180 µH, clamped
Collector Cut-off Current
ICBO
VCB = 100 V, IE = 0
ICER
ICEX1
ICEX2
VCE = 100 V, RBE = 50 Ω, TA = 125°C
VCE = 100 V, VBE(OFF) = −1.5 V
VCE = 100 V, VBE(OFF) = −1.5 V,
TA = 125°C
Emitter Cut-off Current
DC Current Gain ^Note
IEBO
VEB = 5.0 V, IC = 0
hFE1 VCE = 2.0 V, IC = 1.0 A
100
hFE2 VCE = 2.0 V, IC = 2.0 A
100
hFE3 VCE = 2.0 V, IC = 6.0 A
60
Collector Saturation Voltage ^Note
VCE(sat)1 IC = 6.0 A, IB = 0.3 A
Base Saturation Voltage ^Note
VCE(sat)2
VBE(sat)1
IC = 8.0 A, IB = 0.4 A
IC = 6.0 A, IB = 0.3 A
VBE(sat)2 IC = 8.0 A, IB = 0.4 A
Collector Capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
Gain Bandwidth Product
Turn-on Time
Storage Time
Fall Time
fT
VCE = 10 V, IC = 0.5 A
ton
IC = 6.0 A, RL = 8.3 Ω,
tstg
IB1 = −IB2 = 0.3 A, VCC ≅ 50 V
Refer to the test circuit.
tf
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
TYP.
200
120
150
MAX.
10
1.0
10
1.0
10
400
0.3
0.5
1.2
1.5
0.3
1.5
0.3
Unit
V
V
µA
mA
µA
mA
µA
V
V
V
V
pF
MHz
µs
µs
µs
hFE CLASSIFICATION
Marking
M
hFE2
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
VIN
PW
PW ≅ 50 µs
Duty Cycle ≤ 2%
IB1
IB2
VBB ≅ −5 V
RL = 8.3 Ω
IC
Base current
waveform
IB2
IB1
T.U.T.
VCC ≅ 50 V
Collector current
90%
waveform
IC
10%
ton
tstg tf
2
Data Sheet D17261EJ1V0DS