2SC2570A Datasheet, PDF (4/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

2SC2570A
OUTPUT AND INPUT
CAPACITANCE vs. REVERSE VOLTAGE
2
f = 1.0 MHZ
1
Cib
Cob
0.5
0.3
0
0.5 1 2
5 10
20 30
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
VCE = 10 V
IC = 5 mA
20
S21e ²
Gmax
10
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
f = 1.0 GHZ
6
5
4
3
2
1
00.5 ₁
5 10
Collector Current IC (mA)
50 70
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
VCE = 10 V
IC = 20 mA
20
S21e ²
Gmax
10
0
0.1 0.2
0.4 0.6 0.8 1.0 2
Frequency f (GHZ)
S-PARAMETER
0.007.43
0.00.842
0.00.941
120
130
NENT
0.10
0.40
110
0.11
0.39
100
0.12
0.38
0.13
0.37
90
0.14
0.36
80
0.2
0.4
0.6
0.8
1.0
1.5GHZ
0.15
0.35
70
0.03.416
60
0.03.317
0.302.18
50
3.0
4.0
5.0
0.1
0.2
0.3
0.4
10
1.0
20
50
0.8 _{RESISTANCE COMPONENT}
S 0.6 ^1.5GH 11e

R
Zo
0.2
Z
1.0 _0.4
0.4 ^0.6
0.4
S 0.8 22e
0.2
0.2
VCE = 10 V
IC = 5 mA
Z0 = 50 Ω
0
0.1
0.2
0.4 0.6 0.8 1.0 2
Frequency f (GHZ)
S-PARAMETER
0.1
0.2
0.007.43
0.00.842
0.00.941
120
130
NENT
0.10
0.40
110
0.11
0.39
100
0.12
0.38
0.13
0.37
90
0.14
0.36
80
0.2
0.4
0.6
0.8
1.0
1.5GHZ
0.15
0.35
70
0.03.416
0.03.317
60
0.302.18
50
3.0
4.0
5.0
1.0
10
20
0.8
0.6 _{1.5GH RESISTANCE COMPONENT}
Z
S 0.4 _1.0 11e
R
Zo
0.2
50
0.4
0.4
0.2 S 0.6
0.8
22e
0.2
0.3
0.4
VCE = 10 V
IC = 20 mA
Z0 = 50 Ω
4
Data Sheet P10404EJ3V0DS00