2SC2570A Datasheet, PDF (1/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
• Low noise and high gain
• Wide dynamic range
: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA
: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA
ORDERING INFORMATION
Part Number
2SC2570A
2SC2570A-T
Quantity
Loose products (500 pcs)
Taping products (Box type) (2 500 pcs)
Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
70
mA
Total Power Dissipation
Ptot
600
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
©
Printed in Japan
1980, 1999