2SC2570A Datasheet, PDF (3/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TYPICAL CHARACTERISTICS (TA = +25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
600
free Air
400
200
2SC2570A
0
50
100
150
200
Operating Ambient Temperature TA (°C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 10 V
10
5
20
10
0.5 1
5
10
50
Collector Current IC (mA)
1
0.5
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage VBE (V)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
VCE = 10 V
5
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = 10 V
f = 1.0 GHZ
2
1
0.5
0.2
0.1
0.5 1
5 10
Collector Current IC (mA)
50 70
10
5
0
0.5 1
5 10
Collector Current IC (mA)
Data Sheet P10404EJ3V0DS00
50 70
3