2SC2570A Datasheet, PDF (2/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

2SC2570A
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
Maximum Available Gain
Collector Cutoff Current
Emitter Cutoff Current
Symbol
h ^{Note 1}
FE
fT
C ^{Note 2}
Ob
|S21e|²
NF
MAG
ICBO
IEBO
Test Conditions
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCB = 15 V, IE = 0
VEB = 2.0 V, IC = 0
MIN.
40
–
–
8
–
–
–
–
TYP.
–
5.0
0.7
10
1.5
11.5
–
–
MAX.
200
–
0.9
–
3.0
–
0.1
0.1
Unit
–
GHz
pF
dB
dB
dB
µA
µA
Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
2
Data Sheet P10404EJ3V0DS00