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BAT46WJ Datasheet, PDF (5/12 Pages) NXP Semiconductors – Single Schottky barrier diode
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NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
1
IF
(A)
10−1
(1)
(2)
10−2
10−3
(4)
(3)
(5)
006aac387
(3) (5)
(4)
10−4
0.0
0.4
0.8
1.2
VF (V)
(1) Tamb = 150 C
(2) Tamb = 125 C
(3) Tamb = 85 C
(4) Tamb = 25 C
(5) Tamb = 40 C
Fig 3. Forward current as a function of forward
voltage; typical values
10−2
IR
(A)
10−3
006aac388
(1)
10−4
(2)
(3)
10−5
10−6
(4)
10−7
10−8
10−9
0
(5)
20
40
60
80
100
VR (V)
(1) Tamb = 125 C
(2) Tamb = 85 C
(3) Tamb = 60 C
(4) Tamb = 25 C
(5) Tamb = 40 C
Fig 4. Reverse current as a function of reverse
voltage; typical values
35
Cd
(pF)
30
006aac389
25
20
15
10
5
0
0
20
40
60
80
100
VR (V)
f = 1 MHz; Tamb = 25 C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
BAT46WJ
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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